Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers
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Abstract
Very low threshold-current-density InGaAsN quantum-well lasers with GaAsN barriers, grown using metalorganic chemical vapor deposition, have been realized with a room-temperature emission wavelength of 1317 nm. The GaAsN barriers are employed to extend the wavelength, to strain compensate the quantum well, and to improve the hole confinement inside the quantum well. RT threshold current densities of only 210-270 A/cm2 are measured for InGaAsN quantum-well lasers (Lcav=1000-2000 μm) with an emission wavelength of 1317 nm. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers</title><author><name sortKey="Tansu, Nelson" uniqKey="Tansu N">Nelson Tansu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Sinclair Laboratory, 7 Asa Drive, Bethlehem, Pennsylvania 18015</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Pennsylvanie</region></placeName><wicri:cityArea>Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Sinclair Laboratory, 7 Asa Drive, Bethlehem</wicri:cityArea></affiliation></author><author><name sortKey="Yeh, Jeng Ya" uniqKey="Yeh J">Jeng-Ya Yeh</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Reed Center for Photonics, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Wisconsin</region></placeName><wicri:cityArea>Reed Center for Photonics, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison</wicri:cityArea></affiliation></author><author><name sortKey="Mawst, Luke J" uniqKey="Mawst L">Luke J. Mawst</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Reed Center for Photonics, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Wisconsin</region></placeName><wicri:cityArea>Reed Center for Photonics, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0393402</idno><date when="2003-09-29">2003-09-29</date><idno type="stanalyst">PASCAL 03-0393402 AIP</idno><idno type="RBID">Pascal:03-0393402</idno><idno type="wicri:Area/Main/Corpus">00CA11</idno><idno type="wicri:Area/Main/Repository">00BF52</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>MOCVD coatings</term><term>Quantum well lasers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>8535B</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Laser puits quantique</term><term>Revêtement MOCVD</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Very low threshold-current-density InGaAsN quantum-well lasers with GaAsN barriers, grown using metalorganic chemical vapor deposition, have been realized with a room-temperature emission wavelength of 1317 nm. The GaAsN barriers are employed to extend the wavelength, to strain compensate the quantum well, and to improve the hole confinement inside the quantum well. RT threshold current densities of only 210-270 A/cm<sup>2</sup> are measured for InGaAsN quantum-well lasers (L<sub>cav</sub>=1000-2000 μm) with an emission wavelength of 1317 nm. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>13</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers</s1></fA08><fA11 i1="01" i2="1"><s1>TANSU (Nelson)</s1></fA11><fA11 i1="02" i2="1"><s1>YEH (Jeng-Ya)</s1></fA11><fA11 i1="03" i2="1"><s1>MAWST (Luke J.)</s1></fA11><fA14 i1="01"><s1>Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Sinclair Laboratory, 7 Asa Drive, Bethlehem, Pennsylvania 18015</s1><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Reed Center for Photonics, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>2512-2514</s1></fA20><fA21><s1>2003-09-29</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0393402</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Very low threshold-current-density InGaAsN quantum-well lasers with GaAsN barriers, grown using metalorganic chemical vapor deposition, have been realized with a room-temperature emission wavelength of 1317 nm. The GaAsN barriers are employed to extend the wavelength, to strain compensate the quantum well, and to improve the hole confinement inside the quantum well. RT threshold current densities of only 210-270 A/cm<sup>2</sup> are measured for InGaAsN quantum-well lasers (L<sub>cav</sub>=1000-2000 μm) with an emission wavelength of 1317 nm. © 2003 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B55P</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F18</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>4255P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8535B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Laser puits quantique</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Quantum well lasers</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Revêtement MOCVD</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>MOCVD coatings</s0></fC03><fN21><s1>272</s1></fN21><fN47 i1="01" i2="1"><s0>0338M000040</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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